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| FW306 N- Channel Silicon MOS FET High Speed Switching TENTATIVE Features * High density mounting is possible because of the complex type which holds low-on-resistance, very-high-speed-switching and 4-volt-drive N- / P- channel / MOSFETs. * Low ON-state resistance. Absolute Maximum Ratings / Ta=25C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25C (N-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage VDSS VGSS ID IDP PD PT Tch Tstg N-channel 30 25 5 32 1.7 2.0 150 --55 to 150 min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA VDS=30V VGS=20V VDS=10V VDS=10V ID=5A ID=2A VDS=10V VDS=10V VDS=10V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=1mA ID=5A VGS=10V VGS=4V f=1MHz f=1MHz f=1MHz 30 100 10 2.5 8 50 84 460 340 85 13 300 30 50 1.0 65 120 typ max P-channel 30 25 --3 --32 unit V V A A W W C C unit V A A V S m m pF pF pF ns ns ns ns V PW10S, dutycycle1% Mounted on ceramic board (1000mm2 ! 0.8mm) 1unit Mounted on ceramic board (1000mm2 ! 0.8mm) 1.0 5 See Specified Test Circuit IS=5A , VGS = 0 1.2 (P-channel) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage min V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf VSD ID=--1mA VDS=--30V VGS=20V VDS=--10V VDS=--10V ID=--3A ID=--2A VDS=--10V VDS=--10V VDS=--10V , , , , , , , , , , VGS=0 VGS=0 VDS=0 ID=--1mA ID=--3A VGS=--10V VGS=--4V f=1MHz f=1MHz f=1MHz --30 typ max --100 10 --2.5 unit V A A V S m m pF pF pF ns ns ns ns V --1.0 3 See Specified Test Circuit IS=--3A , VGS = 0 5 110 200 460 350 80 13 150 30 50 --1.0 160 320 --1.2 Specifications and information herin are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990401TM2fXHD FW306 Switching Time Test Circuit (N-channel) VDD=15V ID=5A RL=2 D VOUT 4V -10V Switching Time Test Circuit (P-channel) VDD=-15V ID=-3A RL=5 D VOUT VIN 10V 0V VIN PW=10S D.C.1% VIN VIN PW=10S D.C.1% G G P.G 50 S P.G 50 S Electrical Connection (Top View) D1 D1 D2 D2 Case Outline SOP8(unit:mm) 0.43 5.0 4.4 1.5 1.8max 0.1 S1 G1 S2 G2 6.0 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Specifications and information herin are subject to change without notice. 990401TM2fXHD SANYO Electric Co., Ltd. Semiconductor Company 0.15 1.27 |
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